Title of Paper | Author | Volume No | Page No | Year of Publication | Name of Journal | ISSN No of the Journal |
Submicron Electron Transport in Silicon at 300K and 77K | Nag, B. R. , Ahmed, S. R. , Deb Roy, M. | 86 | 773-779 | 1984 | Physica Status Solidi (a) | 1862-6319 |
Hot Electron Transport in In 0.53 Ga 0.47 As | S.R. Ahmed, B.R. Nag, M. Deb Roy | 28 | 1193-1197 | 1985 | Solid State Electronics (U.K.) | 1879-2405 |
Electron Velocity in Short – Samples of Ga 0.47 In 0.53 As at 300K | B.R. Nag, S.R. Ahmed, M.D. Roy | ED-33 | 788-791 | 1986 | IEEE Transactions on Electron Device | 0018-9383 |
Noise Current Spectrum in Submicron Samples | B. R. Nag, S. R. Ahmed, M. Deb Roy | 41 | 197-199 | 1986 | Applied Physics A | 1432-0630 |
High- Field Auto Covariance co-efficient, Diffusion co-efficient and Noise in In Ga As at 300K | B. R. Nag, S. R. Ahmed, M. Deb Roy | 30 | 235-239 | 1987 | Solid State Electronics (U.K.) | 1879-2405 |
Threshold Field and Peak – Valley Velocity Ration in Short Samples of In P at 300K | Nag, B. R., Ahmed, S. R. | ED-34 | 953-956 | 1987 | IEEE Transaction on Electron Devices | 0018-9383 |